Types of etching in chip manufacturing process
Etching is a very important step in the chip manufacturing process.
Etching is mainly divided into dry etching and wet etching.
Etching is mainly divided into dry etching and wet etching.
1)Dry etching
Use plasma to remove unwanted materials.
2)Wet etching
Use corrosive liquid to remove unwanted materials.
Dry Etching
Dry etching includes several methods:
1. Sputtering and ion beam milling
2. Plasma etching
3. High-pressure plasma etching
4. High-density plasma (HDP) etching
5. Reactive ion etching (RIE)
1. Sputtering and ion beam milling
2. Plasma etching
3. High-pressure plasma etching
4. High-density plasma (HDP) etching
5. Reactive ion etching (RIE)
Similar to chemical etching, dry etching is highly selective, targeting specific materials for etching. It is also highly anisotropic, meaning it etches primarily in one direction, starting from the openings in the mask. This process relies on high-energy particles to activate chemical reactions at the surface.
In this process, ions are generated within the plasma and are then accelerated towards the surface and the mask openings. The plasma also produces highly reactive neutral species, which are not influenced by the electric field and can reach the surface in all directions. When both ions and neutral species are present at the same time—particularly at the horizontal surfaces, like the bottom of an etched pit—a highly selective reaction occurs, allowing the target material to be effectively removed.

Wet Etching
Wet etching is a widely used process in semiconductor manufacturing for applications such as polishing, cleaning, and corrosion treatment. It is a chemical method that selectively removes materials from wafers using liquid etchants. These etchants typically consist of various chemicals, such as acids, bases, or solvents, which react with the material to create soluble products that can be easily washed away. The etching process is driven by chemical reactions occurring at the interface between the material and the etchant. The etching rate depends on the reaction kinetics and the concentration of active substances in the solution.
Advantages:
- Good selectivity
- High repeatability
- Efficient production
- Simple equipment
- Low cost
- Good selectivity
- High repeatability
- Efficient production
- Simple equipment
- Low cost
Disadvantages:
- Not suitable for small feature sizes
- Generates a large amount of chemical waste liquid
- Not suitable for small feature sizes
- Generates a large amount of chemical waste liquid

Semicorex offers high-quality CVD SiC solutions for etching, meet the highest performance standards with precision and reliability. If you have any inquiries or need additional details, please don't hesitate to get in touch with us.
Contact phone # +86-13567891907
Email: sales@semicorex.com
Email: sales@semicorex.com
Release time: 2024-12-06
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