With the booming semiconductor industry today, semiconductor ceramic components occupy an important position in semiconductor equipment due to their unique properties.

Dry etching is a process that combines both physical and chemical effects, with ion bombardment being a key physical etching method.

Tantalum carbide (TaC) ceramics possess a melting point of up to 3,880°C and exhibit exceptional hardness, with a Mohs hardness rating of 9 to 10.

Gallium nitride (GaN) is an important third-generation semiconductor material with numerous applications in power electronics. Its performance indicators—such as bandgap width, electron mobility, breakdown electric field strength, and maximum operating temperature—are significantly superior to those of traditional silicon (Si) and gallium arsenide (GaAs) materials.

Atomic layer deposition (ALD) is a technique that enables the deposition of a wide variety of thin film materials from the vapor phase. ALD holds great promise for emerging semiconductor and energy conversion technologies.

Etching is a vital process in semiconductor manufacturing that selectively removes material from the surface of a wafer to define the patterns necessary for circuit formation. This process is primarily categorized into two techniques: wet etching and dry etching, each with its own mechanisms and applications.

Crystal Growth When analyzing crystal growth, we need to consider several key factors that together affect the quality and progress of crystal growth. This article introduces the relevant content of crystal growth, including: the effect of impurities on lattice hardness changes, silicon carbide crystal form control, substrate defect control and electrical property control.

The growth environment temperature for AlN crystals using the PVT (Physical Vapor Transport) method is quite high. The processes of gasification, gas phase transmission, and recrystallization of AlN occur within a relatively closed crucible. As a result, high temperature resistance, corrosion resistance, and long lifespan are critical factors for crucible materials used in AlN crystal growth.

Angstrom (symbol: Å) is a very small unit of length, mainly used to express the scale of microscopic fields, such as the distance between atoms and molecules, or the thickness of thin films in wafer manufacturing.

The basic idea of ​​Silicon-on-Insulator (SOI) technology is to solve the parasitic effects between the device and the substrate by electrically insulating a thin layer on the surface of the wafer carrying the electronic devices from the bulk wafer that serves as a mechanical support.