Etching Wafer Tray

 

 

Semicorex Etching Wafer Tray is a high-performance semiconductor component designed to enhance the efficiency and durability of wafer processing in etching environments. This tray is meticulously engineered using a graphite base with a silicon carbide (SiC) coating, providing exceptional thermal stability, chemical resistance, and mechanical strength. It is specifically tailored to meet the rigorous demands of semiconductor manufacturing, ensuring optimal wafer handling and process reliability.

The core material of the etching wafer tray is high-purity graphite, chosen for its excellent thermal conductivity and lightweight structure. This graphite base is coated with a uniform layer of silicon carbide (SiC), a material known for its outstanding chemical resistance, hardness, and high-temperature stability. The SiC coating acts as a protective barrier, preventing contamination and degradation caused by aggressive etching gases and plasma exposure.

The advantages of wet etching are low cost and batch manufacturing. Many wafers can be etched at the same time. So wet etching still plays an important role in the cleaning of larger MES devices and non-critical layers. Especially in the etching of oxide removal residues and surface peeling, it is more effective and economical than dry etching. The objects of wet etching are mainly silicon oxide, silicon nitride, single crystal silicon and polycrystalline silicon. Wet etching of silicon oxide usually uses hydrofluoric acid (HF) as the main chemical carrier. In order to improve the selectivity, dilute hydrofluoric acid buffered by ammonium fluoride is used in the process. In order to maintain the stability of the pH value, a small amount of strong acid or other elements can be added. Doped silicon oxide is more easily corroded than pure silicon oxide. Wet chemical stripping is mainly for removing photoresist and hard mask (silicon nitride). Hot phosphoric acid (H3PO4) is the main chemical liquid used for wet chemical stripping to remove silicon nitride, and has a good selectivity for silicon oxide. Wet cleaning is similar to wet etching, mainly removing pollutants on the surface of silicon wafers through chemical reactions, including particles, organic matter, metals and oxides. The mainstream wet cleaning is wet chemical method. Although dry cleaning can replace many wet cleaning methods, there is no method that can completely replace wet cleaning. Commonly used chemicals for wet cleaning include sulfuric acid, hydrochloric acid, hydrofluoric acid, phosphoric acid, hydrogen peroxide, ammonium hydroxide, ammonium fluoride, etc. In practical applications, one or more chemicals are mixed with deionized water in a certain proportion to form a cleaning solution, such as SC1, SC2, DHF, BHF, etc.

Semicorex Etching Wafer Tray with SiC Coating is an essential component in modern semiconductor manufacturing, offering exceptional durability, thermal stability, and chemical resistance. By utilizing a graphite-SiC hybrid structure, this tray ensures reliable wafer support, minimal contamination, and enhanced process efficiency. As semiconductor technology advances, investing in high-quality process components like the SiC-coated etching wafer tray is crucial for achieving superior manufacturing outcomes.