ICP Wafer Holder
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ICP Wafer Holder
Semicorex SiC-coated graphite ICP wafer holder is engineered for maximum performance in plasma etching processes. With superior material properties, extended service life, and customizable design options, they provide a cost-effective and reliable solution for advanced semiconductor manufacturing.
Semicorex ICP Wafer Holder is a high-performance component designed for plasma etching processes in semiconductor manufacturing. This ICP Wafer Holder features a silicon carbide (SiC) coated graphite structure, offering exceptional durability, thermal stability, and chemical resistance. It ensures precise wafer positioning and enhances process consistency, making it an ideal choice for inductively coupled plasma (ICP) etching applications.
The ICP Wafer Holder is coated with high-purity SiC, which significantly improves wear resistance, oxidation resistance, and overall longevity. The graphite base provides excellent thermal conductivity, ensuring uniform heat distribution across
the wafer during processing. Manufactured with tight tolerances, it ensures accurate wafer positioning and optimal process control. Custom designs are available to meet specific customer requirements. The SiC coating protects against aggressive plasma environments and harsh chemical etchants, reducing contamination risks and extending service life. The precisely engineered surface minimizes particle generation and enhances wafer retention during high-energy etching processes.
the wafer during processing. Manufactured with tight tolerances, it ensures accurate wafer positioning and optimal process control. Custom designs are available to meet specific customer requirements. The SiC coating protects against aggressive plasma environments and harsh chemical etchants, reducing contamination risks and extending service life. The precisely engineered surface minimizes particle generation and enhances wafer retention during high-energy etching processes.Chemical etching is a process that uses chemical reactions to remove the surface of a material. It uses etching gas (mainly hydrogen fluoride). Like wet etching, this method is isotropic, which means it is not suitable for fine etching. Etching atoms and molecules in the gas phase react chemically with the surface of the material to produce volatile gases. This purely chemical reaction has good selectivity and is isotropic characteristics when the lattice structure is not considered.
Different etching materials have different etchers. The plasma generation methods of dry etching etcher include CCP (capacitive coupling) and ICP (inductive coupling). Due to the different technical characteristics of different methods, they also have differences in the downstream application fields they are good at. CCP technology has higher energy but poor adjustability, which is suitable for etching harder dielectric materials (including metals); ICP has low energy but strong controllability, which is suitable for etching single crystal silicon, polycrystalline silicon and other materials with low hardness or thinner.
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