Silicon Carbide Furnace Tubes

Semicorex silicon carbide furnace tubes are typically installed in the semiconductor high-temperature furnaces, such as diffusion furnaces, oxidation furnaces, and annealing furnaces. Serving as the stable creation chambers for crucial wafer processing, they are able to significantly increase semiconductor wafer yield and production efficiency. Through precise control of furnace temperature, process atmosphere and gas flow, Semicorex silicon carbide furnace tubes can create an optimal processing environment for crucial semiconductor processes, such as wafer doping, oxidation, and defect elimination annealing.

 

 

Semicorex silicon carbide furnace tubes use high-purity SiSiC materials as their matrix and are covered with a uniform and dense CVD SiC coating, which enables the surface purity of silicon carbide furnace tubes to reach over 99.995%. This rigorous material selection endows Semicorex silicon carbide furnace tubes with unparalleled performance.

 

1. Low impurity content, free of particulate matter and metallic impurity contamination.

 

2. High-temperature resistance, stable operation at 1400°C without structural distortion.

 

3. Chemical corrosion resistance, resisting to most process gases and corrosive media.

 

4. High thermal conductivity, which permits rapid heat conduction and even temperature distribution inside the furnace.

 

5. Excellent thermal shock resistance, with no cracking and deformation caused by thermal stress from frequent and drastic temperature changes.

 

6. Strong mechanical strength, able to stably support SiC wafers and the numerous wafers they carry.

Undergoing precision manufacturing procedures, including raw powder mixing, green body forming, green body drying, high-temperature sintering, silicon impregnation, mechanical processing and CVD SiC deposition, Semicorex silicon carbide furnace tubes deliver superior dimensional accuracy and fine surface quality.

 

1. CVD SiC coating thickness: 50 μm-200 μm

2. CVD SiC coating consistency: ±10 μm

3. CVD SiC coating surface roughness : 0.8 – 1.6 μm

4. CVD SiC coating precision: ＜ 5 μm

 

Benefiting from the rigorous raw material selection and high-precision fabrication, Semicorex’s silicon carbide furnace tubes are extensively applied in various high-temperature manufacturing processes in the advanced semiconductor industries such as oxidation process, diffusion process, annealing process and low pressure chemical vapor deposition.