Silicon Carbide Boat

 

 

Semicorex Silicon Carbide Boat is a key component used in the manufacturing process of semiconductor devices. The material is required to have excellent high-temperature strength, semiconductor-grade purity, high thermal conductivity, a thermal expansion coefficient similar to that of the wafer, and precise dimensions. At present, high-purity silicon carbide materials have been widely used to replace traditional quartz glass.

The main key technical of Silicon Carbide Boat links have all been opened up. Among them, the material formula, purification, and finishing processes have been determined and put into practical use in the product manufacturing process. The unique molding process of Silicon Carbide Boat has completed the trial production of a four-hour (F105mm) tubular thin-walled (4.5mm) high-purity silicon carbide boat; the density is greater than 3.0g/cm3; the porosity is zero; the strength exceeds 140MPa. At present, the material of integrated circuits IC in the microelectronics industry is still mainly single-crystal silicon wafers. In the wafer manufacturing process, the doping diffusion of single-crystal silicon wafers above 1000℃ is the key production process for single-crystal silicon wafers to obtain semiconductor properties. In the past single-crystal silicon wafer doping diffusion process, such as carrying 4-hour wafers, the main process material used was quartz glass. However, the fatal defects of quartz glass products are: 1) low softening point (1100oC), not resistant to high temperature; 2) easy to bond with silicon wafers; 3) the deformation of silicon wafers caused by the easy deformation of quartz boats and quartz tubes makes it impossible to improve the yield rate; and the impurities such as potassium and sodium in them are easy to volatilize and contaminate single crystal silicon wafers. In the past two decades, the wafer size of the semiconductor industry has developed from 4 inches (105mm) to 12 inches (reaching more than 300mm), and the line width has developed from 2 microns to 90 nanometers. The requirements for atmosphere uniformity and purity in the manufacturing process have become more stringent. In the diffusion process above 1000℃, especially when the wafer size increases, the quartz furnace tube is deformed due to excessive high temperature and heavy load, and cannot be aligned during the automatic wafer transportation process. Quartz glass materials are far from meeting the needs of wafer manufacturing technology. At present, foreign countries have fully adopted high-performance, high-purity silicon carbide boat and other equipment for wafer heat treatment and doping diffusion components. The properties of these new silicon carbide materials meet the strict and complex process and environmental requirements: good thermal conductivity; the same thermal expansion coefficient as single crystal silicon wafers; excellent thermal shock resistance; high density; high purity and excellent high temperature strength; and can work for a long time in a strong acid and alkali corrosive atmosphere. Wafer heat treatment and doping diffusion components made of new silicon carbide materials include horizontal or vertical wafer boats; process tubes; wafer trays, and cantilever paddles.