Porous Graphite Part
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Porous Graphite Part
Semicorex porous graphite part is a specialized material used in semiconductor process, the crucible is crucial in the quality of single-crystal SiC.
Semicorex porous graphite part is a specialty graphite that is crucial in semiconductor processing. It is a high-porosity graphite of specialty graphite, and this highly engineered crucible porous graphite part is essential for producing high-quality single-crystal silicon carbide (SiC). The porous graphite part's unique porous structure and material properties ensure optimal conditions during the crystal growth process. By providing precise thermal management and a controlled environment, the Semicorex porous graphite part significantly contributes to the uniformity and purity of the resulting SiC crystals. These characteristics of our porous graphite parts are critical for applications in advanced electronic devices, where the performance and reliability of the semiconductor specialty graphite directly impact the overall functionality and efficiency of the end products. The innovation and precision inherent in the design of this porous graphite part underscore its importance in the semiconductor industry, where continuous improvements in material quality are essential for technological advancement.
Key Features of Semicorex Porous Graphite Part:
- The porosity can reach up to 65%;
- The pores are evenly distributed;
- High batch stability;
- High strength, can reach ≤1mm ultra-thin cylindrical shape.
Highly open interconnected pore structure of the specialty graphite
Application
Semicorex porous graphite parts are primarily utilized in the growth of silicon carbide crystals, offering advantages in enhancing the SiC crystal growth environment and optimizing crystal quality.
1. Increase the temperature in the raw material area to improve both axial and radial temperature uniformity, thereby facilitating the complete sublimation and utilization of raw materials.
2. The specialty graphite encourages the elevation of the temperature difference between the top and bottom, as well as the radial temperature gradient on the seed crystal surface, which aids in maintaining convex interface growth.
3. Decrease the overall mass transfer rate to stabilize the entire growth process, effectively inhibiting excessive edge mass transfer and making the growth interface more convex. This advantage of specialty graphite also reduces the fluctuation in the material flow rate within the growth chamber over time.
4. Enhance the growth environment, especially the C/Si ratio at the leading edge of the seed crystal interface, to minimize phase change occurrences during the growth process.
5. The specialty graphite thermal insulation effect of porous graphite reduces the likelihood of recrystallization on the upper part of the raw material to some extent.
2. The specialty graphite encourages the elevation of the temperature difference between the top and bottom, as well as the radial temperature gradient on the seed crystal surface, which aids in maintaining convex interface growth.
3. Decrease the overall mass transfer rate to stabilize the entire growth process, effectively inhibiting excessive edge mass transfer and making the growth interface more convex. This advantage of specialty graphite also reduces the fluctuation in the material flow rate within the growth chamber over time.
4. Enhance the growth environment, especially the C/Si ratio at the leading edge of the seed crystal interface, to minimize phase change occurrences during the growth process.
5. The specialty graphite thermal insulation effect of porous graphite reduces the likelihood of recrystallization on the upper part of the raw material to some extent.
- Specialty Graphite in Crystal Growth
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