SiC Barrel Susceptor for Epitaxy

Superior Heat Resistance and Thermal Uniformity of CVD SiC Coating with Graphite Susceptor:

• Elevated Temperature Stability: The SiC Barrel Susceptor for Epitaxy provides exceptional resistance to degradation at the extreme temperatures encountered during epitaxy process. CVD SiC with graphite susceptor ensures consistent and reliable performance over extended processing cycles, reducing the need for frequent replacements and minimizing downtime.

• Enhanced Temperature Uniformity: The isotropic graphite core of the SiC Barrel Susceptor for Epitaxy , coupled with the uniform CVD SiC coating, facilitates rapid and homogeneous heat distribution across the susceptor surface. This uniform thermal environment provided by CVD SiC coating with graphite susceptor is crucial for achieving excellent thickness uniformity and minimizing defect density in the epitaxial layers.

Barrel CVD SiC Graphite Susceptor Schematic

Excellent Oxidation Resistance and Chemical Resistance of CVD SiC Coating with Graphite Susceptor:

• Extended Service Life: The SiC Barrel Susceptor for Epitaxy, with highly inert CVD SiC coating graphite susceptor exhibiting exceptional resistance to oxidation, performs well even at elevated temperatures. This protective barrier prevents the degradation of the graphite core, significantly extending the lifespan of the susceptor and reducing operational costs.

• Enhanced Process Purity: The robust resistance of the CVD SiC coating and graphite susceptor to corrosion and chemical attack ensures minimal contamination of the epitaxial layer during processing. This is critical for maintaining the electrical properties and performance of the final semiconductor devices.

• Compatibility with Aggressive Chemistries: The SiC Barrel Susceptor for Epitaxy demonstrates compatibility with a wide range of process gases and chemistries commonly used in silicon epitaxy, offering flexibility and process optimization opportunities.

Prevention of Particle Contamination and Impurity Emission of CVD SiC with Graphite Susceptor:

• Ultra-High Purity Environment: The dense, non-porous CVD SiC coating effectively prevents the parting and scattering of graphite particles during operation. This is essential for maintaining a pristine environment within the epitaxy chamber and minimizing particle contamination of the growing epitaxial layer.

• Reduced Gas and Impurity Outgassing: The CVD SiC coating acts as a barrier, significantly reducing the emission of gases and impurities from the graphite substrate. CVD SiC layer contributes to a cleaner process environment, resulting in higher-quality epitaxial layers and improved device performance.

• Enhanced Wafer Yield: By minimizing particle contamination and impurity outgassing, the SiC Barrel Susceptor for Epitaxy contributes to increased wafer yields and overall process efficiency.

Sketches of Different CVD SiC Graphite Susceptor:(A) Horizontal, (B) Vertical, (C) Barrel