SiC Epi Pancake Susceptor

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SiC Epi Pancake Susceptor
Semicorex SiC Epi Pancake Susceptor is crafted from exceptionally pure isostatic graphite and engineered with a homogeneous CVD SiC coating.

Ultra-High Purity for Superior MOCVD Epitaxial GrowthQuality:

  • Exceptional Material Purity: The SiC Epi Pancake Susceptor's foundation of extremely pure isostatic graphite ensures minimal background impurities, a critical factor in achieving the highest-quality MOCVD epitaxial growth. This inherent purity, combined with the homogeneous CVD SiC coating, minimizes contamination risks, leading to superior device performance and yield.

  • Extended Service Life: The robust construction using high-purity CVD SiC ensures the SiC Epi Pancake Susceptor' s exceptional resistance to degradation even under extreme processing conditions. This translates to a longer lifespan for the susceptor, reducing the need for frequent replacements and ultimately lowering operational costs.

Ideal for MOCVD Epitaxial Growth Processes:

  • High-Temperature Stability: The SiC Epi Pancake Susceptor exhibits remarkable thermal stability at the elevated temperatures required for epitaxial growth and MOCVD. CVD SiC ensures consistent and reliable performance throughout extended processing cycles, critical for maintaining uniform deposition rates and film properties.

  • Resistance to Aggressive Chemistries: The chemically inert nature of both the the isostatic graphite and the CVD SiC coating of SiC Epi Pancake Susceptor provides exceptional resistance to a wide range of process gases and precursors. This compatibility of CVD SiC ensures process flexibility and allows for the use of aggressive chemistries often required for advanced epitaxial growth.

A Schematic diagram showing the MOCVD Epitaxial Growth, epitaxial growth,cvd sic,mocvd

A Schematic diagram showing the MOCVD reaction chamber

Zero Contamination and Exceptional Durability for MOCVD Epitaxial Growth:

  • Absence of Peeling: The homogenous and robust CVD SiC coating of the SiC Epi Pancake Susceptor is engineered to prevent peeling or delamination, even after repeated high-temperature cycles. The SiC Epi Pancake Susceptor ensures a pristine deposition environment and prevents particle contamination of the epitaxial growth and MOCVD, crucial for achieving high device yields and reliability.

  • Simplified Cleaning Procedures: The robust and chemically resistant nature of the CVD SiC Epi Pancake Susceptor allows for the uses of strong acids as cleaning methods, simplifying maintenance procedures and minimizing downtime. This ease of maintenance contributes to higher equipment utilization and overall process efficiency.