SiC MOCVD Inner Segment
Semicorex SiC MOCVD Inner Segment boasts as one of ideal materials for the harsh environment within an MOCVD reactor, characterized by extreme temperatures, reactive gases, and potential for particulate The Semicorex SiC MOCVD Inner Segment, with its combination of properties, serves as one of an ideal materials for fabricating these critical cover segments in harsh environment within an MOCVD reactor, characterized by extreme temperatures, reactive gases, and potential for particulate contamination, necessitates the use of robust, high-performance materials.
Firstly, the SiC MOCVD Inner Segment, coated with CVD SiC of exceptional purity (≥6N), virtually eliminate the risk of metallic contamination, ensuring the integrity and desired electrical characteristics of the deposited layers. Furthermore, the SiC MOCVD Inner Segment laughs in the face of extreme temperatures, its inherent thermal stability ensures it maintain its structural integrity and dimensional accuracy even during the most demanding MOCVD processes, contributing to consistent, repeatable results. Besides, the SiC MOCVD Inner Segment shrugs off thermal shock in an MOCVD reactor. Its high thermal conductivity and low thermal expansion prevents cracking or warping, ensuring consistent performance and extending component lifespan within an MOCVD reactor.
By incorporating the CVD SiC MOCVD Inner Segment into Aixtron MOCVD reactors, manufacturers reap significant benefits:
Extended Component Lifespan: The superior wear and corrosion resistance of CVD SiC significantly extends the operational life of critical MOCVD reactor components, reducing downtime for maintenance and replacement.
Improved Process Uniformity: CVD SiC's exceptional thermal properties ensure uniform temperature distribution within the MOCVD reactor, resulting in consistent film thickness and composition across the wafer surface.
Enhanced Wafer Quality: The use of ultra-high purity CVD SiC minimizes particulate generation and prevents metallic contamination within an MOCVD reactor, leading to higher wafer yields and improved device performance.
Reduced Cost of Ownership: While the CVD SiC MOCVD Inner Segment may have a higher initial cost, its extended lifespan, reduced maintenance requirements, and improved process yields ultimately contribute to a lower total cost of ownership.
| Main Specifications of CVD SIC Coating | |||
| Properties | Unit | Values | |
Structure | FCC β phase | ||
Density | g/cm ³ | 3.21 | |
Hardness | Vickers hardness | 2500 | |
Grain Size | μm | 2~10 | |
Chemical Purity | % | 99.99995 | |
Heat Capacity | J·kg-1 ·K-1 | 640 | |
Sublimation Temperature | ℃ | 2700 | |
Felexural Strength | MPa (RT 4-point) | 415 | |
Young's Modulus | Gpa (4pt bend, 1300℃) | 430 | |
Thermal Expansion (C.T.E) | 10-6K-1 | 4.5 | |
Thermal Conductivity | (W/mK) | 300 | |
